48SD1616 | SDRAM, 256 Mb (4-Meg X 16-Bit X 4 banks), 3.3V
The 48SD1616 Synchronous Dynamic Random Access Memory (SDRAM) is ideally suited for space applications requiring high performance computing and high density memory storage. As microprocessors increase in speed and demand for higher density memory escalates, SDRAM has proven to be the ultimate solution by providing bit-counts up to 256 Mega Bits and speeds up to 133 Megahertz. SDRAMs represent a significant advantage in memory technology over traditional SRAMs including the ability to burst data synchronously at high rates with automatic column-address generation, the ability to interleave between banks masking precharge time, and the ability to randomly change column address during each clock cycle.

48SD3208 | SDRAM, 256 Mb (8-Meg X 8-Bit X 4 banks), 3.3V
The 48SD3208 Synchronous Dynamic Random Access Memory (SDRAM) is ideally suited for space applications requiring high performance computing and high density memory storage. As microprocessors increase in speed and demand for higher density memory escalates, SDRAM has proven to be the ultimate solution by providing bit-counts up to 256 Mega Bits and speeds up to 133 Megahertz. SDRAMs represent a significant advantage in memory technology over traditional SRAMs including the ability to burst data synchronously at high rates with automatic column-address generation, the ability to interleave between banks masking precharge time, and the ability to randomly change column address during each clock cycle.

48SD6404 | SDRAM, 256 Mb (16-Meg X 4-bit x 4 banks), 3.3V
The 48SD6404 Synchronous Dynamic Random Access Memory (SDRAM) is ideally suited for space applications requiring high performance computing and high density memory storage. As microprocessors increase in speed and demand for higher density memory escalates, SDRAM has proven to be the ultimate solution by providing bit-counts up to 256 Mega Bits and speeds up to 133 Megahertz. SDRAMs represent a significant advantage in memory technology over traditional SRAMs including the ability to burst data synchronously at high rates with automatic column-address generation, the ability to interleave between banks masking precharge time, and the ability to randomly change column address during each clock cycle.

29F0408 | Flash, 32 Mb (4M x 8)
The 29F0408 high-performance flash memory. The 29F0408 is a 4M (4,194,304) x 8-bit NAND Flash Memory with a spare 128K (131,072) x 8-bit. A program operation programs the 528-byte page in 250 µs and an erase operation can be performed in 2 ms on an 8K-byte block. Data within a page can be read out at 50 ns cycle time per byte. The on-chip write controller automates all program and erase functions, including pulse repetition, where required, and internal verify and margining of data. Even write-intensive systems can take advantage of the 29F0408’s extended reliability of 1,000,000 program/erase cycles by providing either ECC (Error Correction Code) or real time mapping-out algorithm. These algorithms have been implemented in many mass storage applications. The spare 16 bytes of a page combined with the other 512 bytes can be utilized by system-level ECC. The 29F0408 is an optimum solution for large non-volatile storage applications such as solid state storage, digital voice recorder, digital still camera and other portable applications requiring nonvolatility.

69F1608 | Flash, 128 Mb (16M x 8-Bit), MCM
The 69F1608 high-performance flash memory is a 16M x 8-bit NAND Flash Memory with a spare 128K (131,072) x 8-bit. A program operation programs the 528-byte page in 250 µ s and an erase operation can be performed in 2 ms on an 8K-byte block. Data within a page can be read out at 50 ns cycle time per byte. The on-chip write controller automates all program and erase functions, including pulse repetition, where required, and internal verify and margining of data. Even write-intensive systems can take advantage of the 69F1608’s extended reliability of 1,000,000 program/erase cycles by providing either ECC (Error Correction Code) or real time mapping-out algorithm. These algorithms have been implemented in many mass storage applications. The spare 16 bytes of a page combined with the other 512 bytes can be utilized by system-level ECC. The 69F1608 is an optimum solution for large non-volatile storage applications such as solid state data storage, digital voice recorders, digital still cameras and other applications requiring nonvolatility.

27C512T | OTP EPROM, 512kb (64k x 8)
The 27C512T high density 512-Kilobit onetime programmable electrically programmable read only memory microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 27C512T features fast address times and low power dissipation. The 27C512T offers high speed programming using page programming mode.

27C1512T | OTP EPROM, 512kb (32k x 16), MCM
The 27C1512T high density 512K OneTime Programmable Electrically Programmable Read Only Memory multi-chip module (MCM) features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 27C1512T features fast address times and low power dissipation. The 27C1512T offers high speed programming using page programming mode. The 27C1512T is offered in JEDEC-Standard Byte-Wide EPROM pinouts, which allows socket replacement with flash memory and mask ROMs.

27C010T | OTP EPROM, 1 Mb (128k x 8)
The 27C010T high density 1 Megabit One-time Programmable Electrically Programmable Read Only Memory microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 27C010T features fast address times and low power dissipation. The 27C010T offers high speed programming using page programming mode. The 27C010T is offered in JEDEC-Standard Byte-Wide EPROM pinouts, which allows socket replacement with Flash Memory and Mask ROMs.

33C108 | SRAM, 1 Mb (128k x 8-bit)
The 33C108 high-density 1 Megabit SRAM microcircuit features a greater than 100 krad (Si) total dose tolerance. Using Maxwell’s radiation-hardened RAD-PAK® packaging technology, the 33C108 realizes a higher density, higher performance, and lower power consumption. Its fully static design eliminates the need for external clocks, while the CMOS circuitry reduces power consumption and provides higher reliability. The 33C108 is equipped with eight common input/output lines, chip select and output enable, allowing for greater system flexibility and eliminating bus contention. The 33C108 features the same advanced 128K x 8 SRAM, high-speed, and low-power demand as the commercial counter-part.

32C408B | SRAM, 4 Mb (512k x 8)
The 32C408B high-speed 4 Megabit SRAM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. Using RAD-PAK® packaging technology, the 32C408B realizes higher density, higher performance and lower power consumption, and is well suited for high-speed system application. Its fully static design eliminates the need for external clocks, while the CMOS circuitry reduces power consumption and provides higher reliability. The 32C408B is equipped with eight common input/output lines, chip select and output enable, allowing for greater system flexibility and eliminating bus contention.

33LV408 | SRAM, 4 Mb (512k x 8), 3.3V
The 33LV0408 high-density 4 Megabit SRAM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. Using Maxwell’s radiation-hardened RAD-PAK® packaging technology, the 33LV0408 realizes a high density, high performance, and low power consumption. Its fully static design eliminates the need for external clocks, while the CMOS circuitry reduces power consumption and provides higher reliability. The 33LV0408 is equipped with eight common input/output lines, chip select and output enable, allowing for greater system flexibility and eliminating bus contention. The 33LV0408 features the same advanced 512K x 8-bit SRAM, high-speed, and low-power demand as the commercial counterpart.

89LV1632 | SRAM, 16 Mb (512k x 32-Bit), MCM, 3.3V
The 89LV1632 high-performance 16 Megabit Multi-Chip Module (MCM) Static Random Access Memory features a greater than 100 krad(Si) total dose tolerance, depending upon space mission. The four 4-Megabit SRAM die and bypass capacitors are incorporated into a high-reliable hermetic quad flat-pack ceramic package. With high-performance silicon-gate CMOS technology, the 89LV1632 reduces power consumption and eliminates the need for external clocks or timing strobes. It is equipped with output enable (OE) and four byte enable (CS1 - CS4) inputs to allow greater system flexibility. When OE input is high, the output is forced to high impedance. Maxwell Technologies' patented RAD-PAK® packaging technology incorporates radiation shielding in the microcircuit package. In a GEO orbit, RAD-PAK® packaging provides true greater than 100 krad(Si) total radiation dose tolerance, dependent upon space mission. It eliminates the need for box shielding while providing the required radiation shielding for a lifetime in orbit or a space mission. This product is available in Class H or Class K packaging and screening.

28C256T | EEPROM, 256kb (32k x 8)
The 28C256T high density 256k-bit EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28C256T is capable of in-system electrical byte and page programmability. It has a 64-Byte page programming function to make its erase and write operations faster. It also features data polling to indicate the completion of erase and programming operations.

28C010T | EEPROM, 1 Mb (128k x 8)
The 28C010T high-density 1 Megabit (128K x 8-Bit) EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance. The 28C010T is capable of in-system electrical byte and page programmability. It has a 128-byte page programming function to make its erase and write operations faster. It also features data polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 28C010T, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm.

28C011T | EEPROM, 1 Mb (128k x 8), Narrow Package
The 28C011T high-density 1 Megabit (128K x 8-Bit) EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28C011T is capable of in-system electrical byte and page programmability. It has a 128-byte page programming function to make its erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 28C011T, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm.

28LV010 | EEPROM, 1 Mb (128k x 8), 3.3V
The 28LV010 high density, 3.3V, 1 Megabit EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28LV010 is capable of in-system electrical Byte and Page programmability. It has a 128-Byte Page Programming function to make its erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 28LV010, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit on power on and off. Meanwhile, software data protection is implemented using the JEDEC-optional Standard algorithm. The 28LV010 is designed for high reliability in the most demanding space applications.

28LV011 | EEPROM, 1 Mb (128k x 8), 3.3V
The 28LV011 high density, 3.3V, 1 Megabit EEPROM microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 28LV011 is capable of in-system electrical Byte and Page programmability. It has a 128-Byte Page Programming function to make its erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 28LV011, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit on power on and off. Meanwhile, software data protection is implemented using the JEDEC-optional Standard algorithm. The 28LV011 is designed for high reliability in the most demanding space applications.

79LV0408 | EEPROM, 4 Mb (512k x 8-bit), MCM, 3.3V
The 79LV0408 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, dependent upon orbit. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK® MCM packaging technology, the 79LV0408 is the first radiation-hardened 4 Megabit MCM EEPROM for space applications. The 79LV0408 uses four 1 Megabit high-speed CMOS die to yield a 4 Megabit product. The 79LV0408 is capable of in-system electrical Byte and Page programmability. It has a 128 bytes Page Programming function to make its erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 79LV0408, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm.

79C0832 | EEPROM, 8 Mb (256k x 32-bit), MCM
The 79C0832 multi-chip module (MCM) memory features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK® MCM packaging technology, the 79C0832 is the first radiation-hardened 8 megabit MCM EEPROM for space application. The 79C0832 uses eight 1 Megabit high speed CMOS die to yield an 8 megabit product. The 79C0832 is capable of in-system electrical byte and page programmability. It has a 128 x 8 byte page programming function to make its erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 79C0832, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit on power on and off. Software data protection is implemented using the JEDEC optional standard algorithm.

79LV0832 | EEPROM, 8 Mb (256k x 32-bit), MCM, 3.3V
The 79LV0832 multi-chip module (MCM) memory features a typical 100 krad (Si) total dose tolerance, dependent upon space mission. Using Maxwell Technologies’ patented radiation-hardened RAD-PAK® MCM packaging technology, the 79LV0832 is the first radiation-hardened 8 megabit MCM EEPROM for space application. The 79LV0832 uses eight 1 Megabit high speed CMOS die to yield a 8 mega-bit product. The 79LV0832 is capable of in-system electrical Byte and Page programmability. It has a 128 X 8 byte Page Programming function to make its erase and write operations faster. It also features Data Polling and a Ready/Busy signal to indicate the completion of erase and programming operations. In the 79LV0832, hardware data protection is provided with the RES pin, in addition to noise protection on the WE signal and write inhibit on power on and off. Meanwhile, software data protection is implemented using the JEDEC optional standard algorithm. The 79LV0832 is designed for high reliability in the most demanding applications.

7025E | Dual Port Ram (8k x 16)
The 7025E Dual Port RAM High Speed CMOS® microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. The 7025E is designed to be used as a stand-alone 128k-bit Dual Port RAM or as a combination MASTER/SLAVE Dual-Port RAM for 32-bit or more word systems. This design results in full-speed, error-free operation without the need for additional discrete logic. The 7025E provides two independent ports with separate control, address, and I/O pins that permit independent, asynchronous access for reads or writes to any location in memory. An automatic power down feature controlled by CS permits the on-chip circuitry of each port to enter a very low standby power mode.

7206F | FIFO (16k x 9), EPI
The 7206F high speed FIFO microcircuit features a greater than 100 krad (Si) total dose tolerance, depending upon space mission. It is organized such that the data is read in the same sequential order that it was written. Full and Empty flags are provided to prevent overflow and underflow. The expansion logic allows unlimited expansion capability in work size and depth with no timing penalties. Twin address pointers automatically generate internal read and write addresses, and automatically increment with the write and read pin. The 7206F 9-bits wide data are used in data communications applications where a parity bit for error checking is necessary. The retransmit capability allows the read pointer to be reset to its initial position without affecting the write pointer.